Commit 99313529 authored by Isidora Araya's avatar Isidora Araya
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Update 14_doping_and_devices_solutions.md

parent 823c5ab4
......@@ -41,7 +41,7 @@ This result can be obtained when using results in Exercise 1 - Subquestion 2 and
$$ n_e - n_h = N_D - N_A $$
??? "hint?"
??? hint "To find $E_F$"
Solve now for $E_F$ using $n_e$ and $n_h$ expressions obtained in the
[previous lecture](/13_semiconductors/#part-1-pristine-semiconductor).
......@@ -61,8 +61,8 @@ Doing the same as in subquestion 1, an expression for $E_F$ can be found.
For Germanium at $T=300K$, $n_i = 2.4 \times 10^{13} cm^{-3}$
This can be obtained when plugging $m_e^{\ast}=0.55 m_e$, $m_h^{\ast}=0.37 m_e$ and $T=300K$ in
[the results here](/13_semiconductors/#semiconductor-density-of-states-and-fermi-level).
???
## Exercise 3: Performance of a diode
### Subquestion 1
......
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