From 0f80c85e418ea9373d90446c733df774732e3577 Mon Sep 17 00:00:00 2001
From: Kostas Vilkelis <kostasvilkelis@gmail.com>
Date: Sun, 28 Mar 2021 16:45:04 +0000
Subject: [PATCH] update table
---
src/14_doping_and_devices.md | 2 ++
1 file changed, 2 insertions(+)
diff --git a/src/14_doping_and_devices.md b/src/14_doping_and_devices.md
index b5112076..afe1002e 100644
--- a/src/14_doping_and_devices.md
+++ b/src/14_doping_and_devices.md
@@ -127,6 +127,8 @@ As a result, the impurity concentration is bounded to $N_D \lesssim (1/4\textrm{
| $n_h$ | Concentration of holes in the valance band |
| $n_D$ | Concentration of electrons in the donor bound state|
| $n_A$ | Concentration of holes in the acceptor bound state|
+| $N_D$ | Concentration of donor impurities|
+| $N_A$ | Concentration of acceptor impurities|
We now have the necessary tools to determine how the Fermi level changes with doping.
The algorithm to determine the Fermi level of a semiconductor was outlined in the previous lecture and we continue to use it here.
--
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