From 273feb93f6de7fe9ed70d80c97f67c0125fceb3a Mon Sep 17 00:00:00 2001
From: Sathish Kumar RK <rksathish09@gmail.com>
Date: Wed, 3 Apr 2019 10:30:23 +0000
Subject: [PATCH] added pn diode image and source
---
src/14_doping_and_devices.md | 10 +++++++++-
1 file changed, 9 insertions(+), 1 deletion(-)
diff --git a/src/14_doping_and_devices.md b/src/14_doping_and_devices.md
index 5a15ef84..0c760111 100644
--- a/src/14_doping_and_devices.md
+++ b/src/14_doping_and_devices.md
@@ -248,7 +248,15 @@ For that we consider a doped semiconductor in the extrinsic regime.
### Exercise 3: Performance of a diode
-Consider a pn-junction diode. The current generated by the pn diode as a function of applied bias voltage is given as follows
+Consider a pn-junction diode as follows
+
+<img src="https://upload.wikimedia.org/wikipedia/commons/thumb/7/79/PN_diode_with_electrical_symbol.svg/640px-PN_diode_with_electrical_symbol.svg.png" width="50%" alt="pn diode"></img>
+
+??? info "source"
+
+ By Raffamaiden [CC BY-SA 3.0 (https://creativecommons.org/licenses/by-sa/3.0)]), [Link](https://commons.wikimedia.org/wiki/File:PN_diode_with_electrical_symbol.svg)
+
+The current generated by the pn diode as a function of applied bias voltage is given by
$$ I(V) = I_0\left[exp(\frac{eV}{kT})-1\right]$$
--
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