From 701068ee7956ffe1ed8d705831f93810f7314982 Mon Sep 17 00:00:00 2001
From: Kostas Vilkelis <kostasvilkelis@gmail.com>
Date: Fri, 26 Mar 2021 14:00:24 +0000
Subject: [PATCH] Add another missing $

---
 src/14_doping_and_devices.md | 2 +-
 1 file changed, 1 insertion(+), 1 deletion(-)

diff --git a/src/14_doping_and_devices.md b/src/14_doping_and_devices.md
index 80bce4bb..6dd479dc 100644
--- a/src/14_doping_and_devices.md
+++ b/src/14_doping_and_devices.md
@@ -66,7 +66,7 @@ Furthermore, the interactions between the electron and proton are screened by th
 As a result, we need to introduce the following substitutions: $m_e \to m_e^*$, $\epsilon_0 \to \epsilon\epsilon_0$.
 We thus estimate the energy of the bound state created by the impurity:
 $$E = -\frac{m_e^*}{m_e \varepsilon^2} R_E = -0.01 \text{eV (in Ge)}$$
-$r_B = 4$ nm (vs $r_B = 0.5$ Ã… in H).
+$r_B = 4$ nm (vs $r_B = 0.5$ Ã… in H)$.
 The electron is very weakly bound to the impurity! At room temperature (0.026 eV), the donor electron is easily thermally excited into the conduction band. 
 
 On the other hand, we can add a group III element to reduce the average number of electrons in the system.
-- 
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