From 93f00b3d75dee8254b1bea6f6e0920074b37b7b6 Mon Sep 17 00:00:00 2001
From: "T. van der Sar" <t.vandersar@tudelft.nl>
Date: Thu, 4 Apr 2019 08:30:09 +0000
Subject: [PATCH] Update 14_doping_and_devices.md - typo

---
 src/14_doping_and_devices.md | 2 +-
 1 file changed, 1 insertion(+), 1 deletion(-)

diff --git a/src/14_doping_and_devices.md b/src/14_doping_and_devices.md
index 0363c262..bce5a0a3 100644
--- a/src/14_doping_and_devices.md
+++ b/src/14_doping_and_devices.md
@@ -142,7 +142,7 @@ Since $n_e = n_h = n_i \propto e^{-E_G/kT}$, $E_G \approx d \log \sigma / d [kT]
 
 Additional information can be obtained using Hall effect. However Hall effect is much more complex in semiconductors since only the current in the direction perpendicular to the applied electric field must vanish. This, however only means that the electron current is opposite of the hole current in that direction, not that the electrons and holes move parallel to the applied current.
 
-### Light adsorption
+### Light absorption
 
 See [previous lecture](.md#light-adsorption)
 
-- 
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