where $I_s(T)$ is the current flowing through a diode when it is reverse biased i.e. the positive terminal of battery is connected to n-type semiconductor and the negative terminal to p-type. $I_s(T)$ is nearly independent of the applied bias voltage (V) but varies as a function of temperature (T).
where $I_s(T)$ is the current flowing through a diode termed as saturation current. $I_s(T)$ is nearly independent of the applied bias voltage (V) but varies as a function of temperature (T).
<AddI-Vplotofpndiodefromsimon'sbook>
1. Discuss two possible scenarios by which a pn diode generates current in the reverse biased condition.
2. How does temperature affect the saturation current $I_s(t)$ in the two possible scenarios?
3. Sketch a plot of saturation current as a function of temperature T.
4. Does two intrinsic semiconductors joined together generates current?
1. What is the significance of adding dopant atoms to an intrinsic semiconductor? Does two intrinsic semiconductors joined together in the form a p-n diode conducts current?
A p-n diode can be used as a rectifier. When forward biased (positive terminal of the battery is connected to p-type semiconductor and negative terminal is connected to n-type), a p-n diode conducts current. In contrast, when the diode is reverse biased, only negligible current flow occurs which varies as a function of temperature.
2. Discuss the possible scenarios by which a pn diode generates current in the reverse biased condition.
3. How does the temperature affects saturation current $I_s(T)$?
4. Sketch a plot of saturation current as a function of temperature T.
### Exercise 4: Quantum well heterojunction in detail
A quantum well is formed from a layer of $GaAs$ of thickness $L$, surrounded by layers of $Al_{x}Ga_{1−x}As$.
